PUBLICATIONS

 

A: Journal Articles          B: Book Chapters           C: Conference Abstract/Papers           G: Google Scholar

 

A: Journal Articles:

 

2023

 

195. “Improving crystal quality of β-phase MgGaO thin films by using low-temperature homo-buffer layer”

         C. Y. Shou, T. C. Yang, A. Almujtabi, T. Yang, Y. Li, Q. S. Mahmud, M. Xu, J.-G. Zheng, and J. L. Liu

         Appl. Phys. Lett. 122, 212101 (2023) view pdf

 

194. “Metal-semiconductor-metal photodetectors based on b-MgGaO thin films”

          T. C. Yang, C. Y Shou, L. Xu, J. Tran, Y. W. He, Y. Li, P. Wei, and J. L. Liu

          ACS Appl. Electron. Mater. 5, 2122(2023) view pdf

 

2022

 

193. “Resistive switching properties of monolayer h-BN atomristors with different electrodes”

          Y. Li, Z. J. Cui, Y. W. He, H. Tian, T. C. Yang, C. Y. Shou, and J. L. Liu

          Appl. Phys. Lett. 120, 173104(2022) view pdf

 

2021

 

192. “Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films”

         Y. W. He, Y. Li, M. Isarraraz, P. Pena, J. Tran, L. Xu, H. Tian, T. C. Yang, P. Wei, C. S. Ozkan,

         M. Ozkan, and J. L. Liu

         ACS Appl. Nano Mater. 4, 5685(2021) view pdf

 

2020

 

191. “Hexagonal boron nitride encapsulation of organic microcrystals and energy-transfer dynamics”

         W. X. Li, H. Tian, J. van Baren, A. Berges, M. M. Altaiary, E. F. Liu, E. Bekyarova, C. H. Lui, J. L. Liu,

         C. J. Bardeen

         J. Physics Chemistry C 124, 21170(2020) view pdf

 

190. “Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for

          MetalInsulatorMetal Tunneling Devices”

         Y. W. He, H. Tian, P. Das, Z. J. Cui, P. Pena, I. Chiang, W. Shi, L. Xu, Y. Li, T. C. Yang, M. Isarraraz,

         C. S. Ozkan, M. Ozkan, R. K. Lake, and J. L. Liu

         ACS Applied Materials Interfaces 12, 35318(2020) view pdf

 

189. “Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron

          nitride monolayers using metal-insulator-metal devices”

          Z. J. Cui, Y. W. He, H. Tian, A. Khanaki, L. Xu, W. H. Shi, and J. L. Liu

          ACS Applied Electronic Materials 2, 747(2020) view pdf

 

2019

 

188. “Growth dynamics of millimeter-sized single-crystal hexagonal boron nitride monolayers on secondary

          recrystallized Ni (100) substrates”

          H. Tian, Y. W. He, P. Das, Z. J. Cui, W. H. Shi, A. Khanaki, R. K. Lake, and J. L. Liu

          Advanced Materials Interfaces 1901198(2019) view pdf

 

187. “Large-area, adlayer-free single-layer h-BN film achieved by controlling intercalation growth”

        Y. He, H. Tian, A. Khanaki, W. H. Shi, J. Tran, Z. J. Cui, P. Wei, and J. L. Liu

        Appl. Surf. Sci. 498, 143851(2019) view pdf

 

2018

 

186. “Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-quality

         Large-area Two-dimensional Hexagonal Boron Nitride Layers”

         H. Tian, A. Khanaki, P. Das, R. J. Zheng, Z. J. Cui, Y. W. He, W. H. Shi, Z. G. Xu, R. Lake, and J. L. Liu

         Nano Lett. 18, 3352(2018) view pdf

 

185. “Graphene/ZnO single-mode lasing”

         J. L. Liu

         Science Bulletin 63, 527(2018) view pdf

 

184. “Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices”

          M. Suja, B. Debnath, S. B. Bashar, L. X. Su, R. Lake, and J. L. Liu

          Applied Surface Science 439, 525(2018) view pdf

 

183. “Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene

          heterostructures”

          A. Khanaki, H. Tian, Z. G. Xu, R. J. Zheng, Y. W. He, Z. J. Cui, J. C. Yang, J. L. Liu

Nanotechnology 29, 035602(2018) view pdf

 

2017

 

182. “Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO

          Vertical Heterostructures”

          G. Li, M. Suja, M. Chen, E. Bekyarova, R. C. Haddon, J. L. Liu, and M. E. Itkis

         ACS Appl. Mater. Interfaces 9, 37094(2017) view pdf

 

181. “Precipitation growth of graphene under exfoliated hexagonal boron nitride to form heterostructures

          on cobalt substrate by molecular beam epitaxy”

          R. J. Zheng, A. Khanaki, H. Tian, Y. W. He, Y. T. Cui, Z. G. Xu, and J. L. Liu

         Appl. Phys. Lett. 111, 011903(2017) view pdf

 

180. “Self-assembled cubic boron nitride nanodots”

         A. Khanaki, Z. G. Xu, H. Tian, R. J. Zheng, Z. Zuo, J. –G. Zheng, and J. L. Liu

         Scientific Reports 7, 4087(2017) view pdf

 

179. “Electrically driven deep ultraviolet MgZnO lasers at room temperature”

          M. Suja, S. B. Bashar, B. Debnath, L. X. Su, W. H. Shi, R. Lake, and J. L. Liu

          Scientific Reports 7, 2677(2017) view pdf

 

178. “Low-temperature growth of graphene on iron substrate by molecular beam epitaxy”

          Renjing Zheng, Zhongguang Xu, Alireza Khanaki, Hao Tian, Zheng Zuo, Jian-Guo Zheng, Jianlin Liu

          Thin Solid Films 627, 39(2017) view pdf

 

177. “Large-area growth of multilayer hexagonal boron nitride on polished cobalt foils by plasm-assisted

          molecular beam epitaxy”

          Zhongguang Xu, Hao Tian, Alireza Khanaki, Renjing Zheng, Mohammad Suja & Jianlin Liu

          Scientific Reports 7, 43100(2017) view pdf

 

2016

 

176. “Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction”

         Sunayna B. Bashar, Chunxia Wu, Mohammad Suja, Hao Tian, Wenhao Shi, and Jianlin Liu

         Advanced Optical Materials 4, 2063(2016) view pdf

 

175. “Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode”

         S. B. Bashar, M. Suja, W. H. Shi, and J. L. Liu

         Appl. Phys. Lett. 109, 192101(2016) view pdf

 

174. “Metal/ZnO/MgO/Si/metal write-once-read-many-times memory”

      B. S. Zhang, C. Hu, T. S. Ren, B. Wang, J. Qi, Q. Zhang, J.-G. Zheng, Y. Xin and J. L. Liu

          IEEE Transactions on Electron Devices 63, 3508(2016) view pdf

 

173. “Direct growth of hexagonal boron nitride/graphene heterostructures on Co foil substrates by

          plasma-assisted molecular beam epitaxy”

          Z. Xu, A. Khanaki, H. Tian, R. J. Zheng, M. Suja, J. –G. Zheng, and J. L. Liu

         Appl. Phys. Lett. 109, 043110(2016) view pdf

 

172. “Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and

          silicon substrate”

          S. Chen, J. T. Chen, J. L. Liu, J. Qi, Y. H. Wang

         Applied Surface Science 387, 103(2016) view pdf

 

171. “Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes”

          F. Gao, D. K. Zhang, J. Y. Wang, H. B. Sun, Y. Yin, Y. Sheng, S. C. Yan, B. Yan, C. H. Sui,

         Y. D. Zheng, Y. Shi, and J. L. Liu

         Appl. Phys. Lett. 108, 261103 (2016) view pdf

 

170. “An Sb-doped p-type ZnO nanowire based random laser diode”

          S. B. Bashar, M. Suja, M. Morshed, F. Gao and J. L. Liu

          Nanotechnology 27, 065204(2016) view pdf

 

2015

 

169. “Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted

          molecular beam epitaxy”

         Z. Xu, R. J. Zheng, A. Khanaki, Z. Zuo, and J. L. Liu

         Appl. Phys. Lett. 107, 213103(2015) view pdf

 

168. “Resistive switching in Ga- and Sb-doped ZnO single nanowire devices”

         B. Wang, T. S. Ren, S. Chen, B. S. Zhang, R. F. Zhang, J. Qi, S. Chu, J. Huang, and J. L. Liu

         J. Mater. Chem. C 3, 11881(2015) view pdf

 

167. “Effects of 8-mer acidic peptide concentration on the morphology and photoluminescence of synthesized

        ZnO nanomaterials”

        C. H. Moon, M. Tousi, J. Cheeney, T. Ngo-Duc, Z. Zuo, J. L. Liu, and E. D. Haberer

        Appl. Phys. A 121, 757(2015) view pdf

 

166. “In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy”

          Z. Zuo, Z. G. Xu, R. J. Zheng, A. Khanaki, J. -G. Zheng, and J. L. Liu

          Scientific Reports 5, 14760(2015) view pdf

 

165. “The effect of high-temperature oxygen annealing on field emission from ZnO nanowire arrays”

          S. Chen, J. T. Chen, J. L. Liu, J. Qi, and Y. H. Wang

          Applied Surface Science 357, 413(2015) view pdf

 

164. “Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction”

          F. Gao, M. M. Morshed, S. B. Bashar, Y. D. Zheng, Y. Shi, and Jianlin Liu

          Nanoscale 7, 9505(2015) view pdf

 

163. “Realization of Cu-doped p-type ZnO thin films by molecular beam epitaxy”

          M. Suja, S. B. Bashar, M. M. Morshed, and J. L. Liu

          ACS Applied Materials and Interfaces 7, 8894(2015) view pdf

 

162. “Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single heterostructure diode”

          M. M. Morshed, Z. Zuo, J. Huang, and J. Liu

          Appl. Phys. A 118, 817(2015) view pdf

 

2014

 

161. “Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal Device”

          M. M. Morshed, M. Suja, Z. Zuo, and J. L. Liu

          Appl. Phys. Lett. 105, 211107(2014) view pdf

 

160. “Photoluminescence study of nitrogen doped p-type MgxZn1-xO nano crystalline thin film grown by

          plasma assisted molecular beam epitaxy”

          M. M. Morshed, Z. Zuo, J. Huang, J. Zheng, Q. Lin, X. Yan, and J.L. Liu

         Appl. Phys. A 117, 1467(2014), DOI 10.1007/s00339-014-8576-z view pdf

 

159. “Distributed Bragg reflector assisted low-threshold ZnO nanowire random laser diode”

         J. Huang, M. Morshed, Z. Zuo, and J. L. Liu

         Appl. Phys. Lett. 104, 131107(2014) view pdf

 

2013

 

158. “Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications”

         J. Huang, J. Qi, Z. L. Li, and J. L. Liu

         Nanotechnology 24 (2013) 395203 view pdf

 

157. “Multimode resistive switching in single ZnO nanoisland system”

          Jing Qi, Mario Olmedo, Jian-Guo Zheng, and Jianlin Liu

          Scientific Reports 3, 2405 (2013) view pdf

 

156. “Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using a single triangular-shaped Si nanowire channel”

         Jingjian Ren, Dong Yan, Sheng Chu, and Jianlin Liu

         Appl. Phys. A 111, 719(2013) view pdf

 

155. “ZnO p-n homojunction random laser diode based on nitrogen-doped p-type nanowires”

          J. Huang, S. Chu, J. Y. Kong, L. Zhang, C. M. Schwarz, G. P. Wang, L. Chernyak, Z. H. Chen, and J. L. Liu

         Advanced Optical Materials 1(2), 179(2013) view pdf

 

154. “Current self-complianced and self-rectifying resistive switching in Ag-electroded Na-doped ZnO nanowires”

          J. Qi, J. Huang, D. Paul, J. J. Ren, S. Chu, and J. L. Liu

          Nanoscale 5, 2651(2013) view pdf

 

153. “Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy”

         Z. Zuo, M. Morshed, W. P. Beyermann, J.-G. Zheng, Y. Xin, and J. L. Liu

         AIP Advances 3, 032110(2013) view pdf

 

152. “Use of distributed Bragg reflectors to enhance Fabry–Pérot lasing in vertically aligned ZnO nanowires”

          J. Y. Kong, S. Chu, J. Huang, M. Olmedo, W. H. Zhou, L. Zhang, Z. H. Chen, and J. L. Liu

          Appl. Phys. A 110, 23(2013) view pdf

 

2012

 

151. “The effect of top contact on ZnO write-once-read-many-times memory”

          Jing Qi, Qing Zhang, and Jianlin Liu

          Phys. Status Solidi RRL 6, 478(2012) view pdf

 

150. “p-type behavior of Sb doped ZnO from p-n-p memory structure”

          J. Huang, Z. L. Li, S. Chu, and J. L. Liu

          Appl. Phys. Lett. 101, 232102(2012) view pdf

 

149. “Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory”

          H. M. Zhou, Z. L. Li, J. –G. Zheng, and J. L. Liu

          Appl. Phys. A 109, 535(2012) view pdf

 

148. “Programmable On-Chip ESD Protection Using Nanocrystal Dots Mechanism and Structures”

          Zitao Shi, Xin Wang, Jian Liu, Lin Lin, Hui Zhao, Qiang Fang, Li Wang, Chen Zhang, Siqiang Fan, He Tang,

          Bei Li, Albert Wang, Jianlin Liu, and Yuhua Cheng

          IEEE Trans. on Nanotechnology 11, 884(2012) view pdf

 

147. “Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending

           Nanocrystal Memory Scaling Limit”

         Jingjian Ren, Bei Li, Jian-Guo Zheng, Mario Olmedo, Huimei Zhou, Yi Shi, and Jianlin Liu

         IEEE Electron Device Letters 33, 1390(2012) view pdf

 

146. “Strain-less directed self-assembly of Si nanocrystals on patterned SiO2 substrate”

          Jingjian Ren, Hao Hu, Feng Liu, Sheng Chu, and Jianlin Liu

          J. Appl. Phys. 112, 054311 (2012) view pdf

 

145. “Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy”

          Zheng Zuo, Huimei Zhou, Mario J. Olmedo, Jieying Kong, Ward P. Beyermann, Jian-Guo Zheng, Yan Xin, and Jianlin Liu

          J. Appl. Phys. 112, 053708 (2012) view pdf

 

144. “Noble metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence”

          Sheng Chu, Jingjian Ren, Dong Yan, Jian Huang, and Jianlin Liu

          Appl. Phys. Lett. 101, 043122(2012) view pdf

 

143. “Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure”

          Jieying Kong, Sheng Chu, Zheng Zuo, Jingjian Ren, Mario Olmedo, Jianlin Liu

          Applied Physics A 107, 971(2012) view pdf

 

142. “Unipolar resistive switching in Au/Cr/Mg0.84 Zn0.16 O2−δ /p+-Si”

          Jing Qi, Jingjian Ren, Mario Olmedo, Ning Zhan, and Jianlin Liu

          Applied Physics A 107, 891(2012) view pdf

 

141. “Temperature-Dependent Electron Transport in Highly Ordered Co/Al2O3 Core-Shell Nanocrystal

          Memory Synthesized with Di-Block Co-Polymers”

          Huimei Zhou, James A. Dorman, Ya-Chuan Perng, Jane P. Chang, and Jianlin Liu

          J. Appl. Phys. 111, 064505(2012) view pdf

 

140. “Resistive switching in single epitaxial ZnO nanoislands

          Jing Qi, Mario Olmedo, Jingjian Ren, Ning Zhan, Jianze Zhao, Jian-Guo Zheng, and Jianlin Liu

          ACS Nano 6, 1051(2012) view pdf

 

139. “High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory”

          Jingjian Ren, Bei Li, Jian-Guo Zheng, and Jianlin Liu

          Solid-State Electronics 67, 23(2012) view pdf

 

2011

 

138. “Cobalt-assisted large-area epitaxial graphene growth in thermal cracker enhanced gas source molecular beam epitaxy”

         Ning Zhan, Guoping Wang and Jianlin Liu

         Appl. Phys. A 105, 341(2011) view pdf

 

137. “Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes”

          Mario Olmedo, Chuan Wang, Koungmin Ryu, Huimei Zhou, Jingjian Ren, Ning Zhan, Chongwu Zhou, and Jianlin Liu         

          ACS Nano 5, 7972(2011) view pdf

 

136. “Write-once-read-many-times Memory Based on ZnO on p-Si for Long-time Archival Storage”

          Jing Qi, Qing Zhang, Jian Huang, Jingjian Ren, Mario Olmedo, and Jianlin Liu

          IEEE Electron Device Letters 32(10), 1445(2011) view pdf

 

135. “Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires”

        C. Schwarz, E. Flitsiyan, L. Chernyak, V. Casian, R. Schneck, Z. Dashevsky, S. Chu, and J. L. Liu

          J. Appl. Phys. 110, 056108(2011) view pdf

 

134. “Vapor-solid-solid growth of NiSi2 nanocrystals for memory applications”

          Bei Li, Jianlin Liu, Reuben D. Gann, Jory A. Yarmoff, and Yu Zhu

          IEEE Transactions on Nanotechnology 10, 1120(2011) view pdf

 

133. “Graphene based nickel nanocrystal memory”

          Ning Zhan, Mario Olmedo, Guoping Wang, and Jianlin Liu

          Appl. Phys. Lett. 99, 113112(2011) view pdf

 

132. “Thermal annealing effect on spin coherence in ZnO single crystals”

          Z. Yang, Y. Li, D. C. Look, H. M. Zhou, W. V. Chen, R. K. Kawakami, P. K. L. Yu, and J. L. Liu

          J. Applied Physics 110, 016101(2011) view pdf

 

131. “Electrically pumped waveguide lasing from ZnO nanowires”

          Sheng Chu, Guoping Wang, Weihang Zhou, Yuqing Lin, Leonid Chernyak, Jianze Zhao, Jieying Kong, Lin Li, Jingjian Ren and Jianlin Liu

          Nature Nanotechnology 6, 506(2011). DOI: 10.1038/NNANO.2011.97 view pdf

 

130. “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode”

          Sheng Chu, Jianze Zhao, Zheng Zuo, Jieying Kong, Lin Li, and Jianlin Liu

          J. App. Phys. 109, 123110(2011) view pdf

 

129. “Synthesis and characterization of Ag-doped p-type ZnO nanowires”

          Guoping Wang, Sheng Chu, Ning Zhan, Huimei Zhou, Jianlin Liu

          Appl. Phys. A 103, 951(2011) view pdf

 

128.  TiSi2 nanocrystal metal oxide semiconductor field effect transistor memory”

          Huimei Zhou, Bei Li, Zheng Yang, Ning Zhan, Dong Yan, Roger K. Lake, and Jianlin Liu

          IEEE Transactions on Nanotechnology 10, 499(2011) view pdf

 

127. “Memory characteristics of ordered Co/Al2O3 core-shell nanocrystal arrays assembled by di-block co-polymer process”

         Huimei Zhou, James A. Dorman, Ya-Chuan Perng, Stephanie Gachot, Jian-Guo Zheng, Jane P. Chang, and Jianlin Liu

         Appl. Phys. Lett. 98, 192107(2011) view pdf

 

126. “Improvement on ZnO optical and structure properties by surfactant effect of lightly Sb doping by MOCVD”

         J. Z. Zhao, H. W. Liang, J. C. Sun, Q. J. Feng, J. M. Bian, L. Z. Hu, G.T. Du, J. J. Ren and J. L. Liu

         Physica Status Solidi A 208, 825(2011) view pdf

 

125. “Nonvolatile memories with Ge/Si heteronanocrystals as floating gate”

          Bei Li, and Jianlin Liu

          IEEE Transactions on Nanotechnology 10, 284(2011) view pdf

 

124. “Layer-by-layer synthesis of large-area graphene films by thermal cracker enhanced gas source molecular beam epitaxy”

          Ning Zhan, Mario Olmedo, Guoping Wang, and Jianlin Liu

          Carbon 49, 2046(2011) view pdf

 

123. “ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection”

         Guoping Wang, Sheng Chu, Ning Zhan, Yuqing Lin, Leonid Chernyak, and Jianlin Liu

         Appl. Phys. Lett. 98, 041107(2011) view pdf

 

122. “Minority carrier transport in p-ZnO nanowires”

         Y. Lin, M. Shatkhin, E. Flitsiyan, L. Chernyak, Z. Dashevsky, S. Chu, and J. L. Liu

         J. Appl. Phys. 109, 016107(2011) view pdf

 

121. “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy”

          Z. Yang, Z. Zuo, H.M. Zhou, W.P. Beyermann, and J.L. Liu

          Journal of Crystal Growth 314, 97(2011) view pdf

 

2010

 

120. “Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films”

          Z. Yang, H. M. Zhou, W. V. Chen, L. Li, J. Z. Zhao, P. K. L. Yu, and J. L. Liu

          J. Appl. Phys. 108, 066101(2010) view pdf

 

119. “Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering”

        Jing Qi, Daqiang Gao, Jinhong Liu, Wenge Yang, Qi Wang, Jinyuan Zhou, Yinghu Yang, Jianlin Liu

         Appl. Phys. A 100, 79(2010) view pdf

 

118. “Synthesis of high-density PtSi nanocrystals for memory applications”

          Bei Li, Jingjian Ren and Jianlin Liu

          Appl. Phys. Lett. 96, 172104(2010) view pdf

 

117. “Thermal stability of CdZnO thin films grown by molecular-beam epitaxy”

          L. Li, Z. Yang, Z. Zuo, J.H. Lim, and J.L. Liu

          Applied Surface Science 256, 4734(2010) view pdf

 

116. “ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy”

         Zheng Yang, Sheng Chu, Winnie V. Chen, Lin Li, Jieying Kong, Jingjian Ren, Paul K. L. Yu, and Jianlin Liu

        Applied Physics Express 3, 032101(2010) view pdf

 

115. “Na-Doped p-Type ZnO Microwires”

         Wei Liu, Faxian Xiu, Ke Sun, Ya-Hong Xie, Kang L Wang, Yong Wang, Jin Zou, Zheng Yang, and Jianlin Liu

         J. AM. Chem. Soc. 132, 2498(2010) view pdf

 

2009

 

114. “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy”

          Z. Yang, L. Li, Z. Zuo, J.L. Liu

          Journal of Crystal Growth 312, 68(2009) view pdf

 

113. “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers”

          L. Li, Z. Yang, J. Y. Kong, and J. L. Liu

          Appl. Phys. Lett. 95, 232117(2009) view pdf

 

112. “CoSi2-coated Si nanocrystal memories”

          Bei Li, and Jianlin Liu

          J. Appl. Phys. 105, 084905(2009) view pdf

 

111. “Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes”

         Mario Olmedo, Alfredo A. Martinez-Morales, Gang Liu, Emre Yengel, Cengiz S. Ozkan,

         Chun Ning Lau, Mihrimah Ozkan, and Jianlin Liu

         Appl. Phys. Lett. 94, 123109(2009) view pdf

 

110. “Microstructures and transport properties of ZnO:Mn diluted magnetic semiconductor thin films”

         Z. Yang, W. P. Beyermann, M. B. Katz, O. K. Ezekoye, Z. Zuo, Y. Pu, J. Shi, X. Q. Pan, and J. L. Liu

         J. Appl. Phys. 105, 053708(2009) view pdf

 

109. “Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy”

         Z. Yang, D. C. Look, and J. L. Liu

         Appl. Phys. Lett. 94, 072101(2009) view pdf

 

2008

 

108. “Electron carrier concentration dependent magnetization and transport properties in ZnO:Co diluted magnetic semiconductor thin films”

        Z. Yang, M. Biasini, W. P. Beyermann, M. B. Katz, O. K. Ezekoye, X. Q. Pan, Y. Pu, J. Shi, Z. Zuo, and J. L. Liu

        J. Appl. Phys. 104, 113712(2008) view pdf

 

107. “Study of plasma power effect on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitacy

         Z. Yang, J.-H. Lim, S. Chu, Z. Zuo, and J. L. Liu

         Applied Surface Science 255, 3375(2008) view pdf

 

106. “Electrically pumped ZnO ultraviolet diode lasers on Si”

          Sheng Chu, Mario Olmedo, Zheng Yang, Jieying Kong, and Jianlin Liu

          Appl. Phys. Lett. 93, 181106(2008) view pdf

 

105. “Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes”

         Jieying Kong, Sheng Chu, Mario Olmedo, Lin Li, Zheng Yang, and Jianlin Liu

         Appl. Phys. Lett. 93, 132113(2008) view pdf

 

104. “A TiSi2/Si hetero-nanocrystal memory operated with hot carrier injections”

          Y. Zhu, and J. L. Liu

          IEEE Transactions on Nanotechnology 7, 305(2008) view pdf

 

103. “Generation of nitrogen acceptors in ZnO using pulse thermal processing”

        Jun Xu, Ronald Ott, Adrian S. Sabau, Zhengwei Pan, Faxian Xiu, Jianlin Liu, Jean-Marie Erie, and David P. Norton

          Appl. Phys. Lett. 92, 151112(2008) view pdf

 

102. Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes”

           S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li and J. L. Liu

          Appl. Phys. Lett. 92, 152103(2008) view pdf

 

101. “Ultraviolet emission from Sb-doped p-type ZnO-based heterojunction light emitting diodes”

         L. J. Mandalapu, Z. Yang, S. Chu, and J. L. Liu

         Appl. Phys. Lett. 92, 122101(2008) view pdf    

 

100. “Electron beam induced current profiling of ZnO p-n homojunctions”

        L. Chernyak, C. Schwarz, E. S. Flitsiyan, S. Chu, J. L. Liu, and K. Gartsman

        Appl. Phys. Lett. 92, 102106(2008) view pdf

 

99. “Electron concentration dependent magnetization and magnetic anisotropy in ZnO:Mn thin films”

       Z. Yang, J. L. Liu, M. Biasini, and W. Beyermann

       Appl. Phys. Lett. 92, 042111(2008) view pdf

 

2007

 

98. “Ge/Si self-assembled quantum dots and their optoelectronic device applications”

       K. L. Wang, D. H. Cha, J. L. Liu, and C. Chen

       Proceedings of The IEEE 95, 1866(2007) (Invited paper) view pdf

 

97. “Ge/Si heteronanocrystal floating gate memory”

       Bei Li, Jianlin Liu, G. F. Liu, and J. A. Yormoff

       Appl. Phys. Lett. 91, 132107(2007) view pdf

 

96. “Response to “Comment on “p-type behavior from Sb-doped ZnO heterojunction diodes”

        L. J. Mandalapu, and J. L. Liu

        Appl. Phys. Lett. 91, 136102(2007) view pdf

 

95. “Al/Ti contacts to Sb-doped p-ZnO

       L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu

       J. Applied Physics 102, 023716(2007) view pdf

 

94. “Influence of electron injection on the temporal response of ZnO homo-junction diodes”

      O. Lopatiuk-Tirpak, G. Nootz, E. Flitsiyan, L. Chernyak, L. J. Mandalapu, Z. Yang, J. L. Liu,

       K. Gartsman, and A. Osinsky

       Appl. Phys. Lett. 042115(2007) view pdf 

 

93. “Ultraviolet photoconductive detectors based on Ga-doped ZnO by molecular beam epitaxy”

      L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu

      Solid-state Electronics 51, 1014(2007) view pdf

 

92. “Low-resistivity Au/Ni contacts to Sb-doped p-type ZnO

       L. J. Mandalapu, Z. Yang, and J. L. Liu

       Appl. Phys. Lett. 90, 252103(2007) view pdf

 

91. “Fabrication and characterization of TiSi2/Si heteronanocrystal metal-oxide-semiconductor memories”

       Y. Zhu, B. Li, and J. L. Liu

       J. Appl. Phys. 101, 063702(2007) view pdf

 

90. “Response to “Comment on ‘Photoluminescence study of Sb-doped p-type ZnO films by molecular beam epitaxy’””

       F. X. Xiu, and J. L. Liu

       Appl. Phys. Lett. 90, 116103(2007) view pdf

 

89. “Numerical investigation of transient capacitance of Ge/Si hetero-nanocrystal memory in retention mode”

        Yan Zhu, Dengtao Zhao, and Jianlin Liu

         Journal of Applied Physics 101, 034508(2007) view pdf

 

2006

 

88. “TiSi2/Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory”

        Yan Zhu, Bei Li, Jianlin Liu, G. F. Liu and J. A. Yarmoff

        Applied Physics Letters 89, 233113(2006) view pdf

 

87.  “Influence of the electron injection on the photoresponse of ZnO homojunction diode”

       O. Lopatiuk-Tirpak, L. Chernyak, L. Mandalapu, Z. Yang, J. L. Liu, K. Gartsman, Y. Feldman, Z. Dashvsky

      Appl. Phys. Lett. 89, 142114(2006) view pdf

 

86. “Study of minority carrier diffusion length increase in p-type ZnO:Sb

      O. Lopatiuk-Tirpak, L. Chernyak, F. X. Xiu, J. L. Liu, S. Tan, F. Ren, S. Pearton, K. Gartsman,

      Y. Feldman, A. Osinsky, P. Chow

      J. Appl. Phys. 100, 086101(2006) view pdf

 

85. “Folded acoustic phonon modes in Ge/Si quantum dot superlattices with different periods”

        Zheng Yang, Jianlin Liu, Yi Shi, Youdou Zheng, and Kang L. Wang

        Journal of Nanoelectronics and Optoelectronics 1, 86(2006) view pdf

 

84. “Bi-induced acceptor states in ZnO by molecular beam epitaxy”

        F. X. Xiu, L. J. Mandalapu, Z. Yang, J. L. Liu, G. F. Liu, and J. A. Yarmoff

        Appl. Phys. Lett. 89, 052103(2006) view pdf

 

83. “Emerging memory devices: Nontraditional possibilities based on nanomaterials and nanostructures”

        K. Galatsis, Y.Y. Botros, K. Wang, Y. Yang, Y. H. Xie, F. Stoddart, R. Kaner, C. Ozkan, J. L. Liu,

        M.Ozkan, C. Zhou, and K. W. Kim

        IEEE Circuits & Devices Magazine 22, 12(2006) view pdf

 

82. “Carrier concentration dependence of acceptor binding energy in p-type ZnO

        O. Lopatiuk-Tirpak, W. V. Schoenfeld, L. Chernyak, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S. J. Pearton,

        A. Osinsky and P. Chow

        Appl. Phys. Lett. 88, 202110(2006) view pdf

 

81. “Donor and acceptor competitions in phosphorus-doped ZnO

        F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu

        Appl. Phys. Lett. 88, 152116(2006) view pdf

 

80. “Transient process in a Ge/Si hetero-nanocrystal p-channel memory”

        Dengtao Zhao, Yan Zhu, Ruigang Li, and Jianlin Liu

        Solid-state Electronics 50, 362(2006) view pdf

 

79. “Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals”

       Vladimir A. Fonoberov, Khan A. Alim, Alexander A. Balandin, Faxian Xiu and Jianlin Liu

        Phys. Rev. B 73, 165317(2006) view pdf

 

78. “p-type behavior from Sb-doped ZnO heterojunction photodiode”

        L. J. Mandalapu, F. X. Xiu, Z. Yang, D. T. Zhao, and J. L. Liu

        Appl. Phys. Lett. 88, 112108(2006) view pdf

 

77.  “Self-aligned TiSi2/Si heteronanocrystal nonvolatile memory”

         Yan Zhu, Dengtao Zhao, Ruigang Li, and Jianlin Liu

          Appl. Phys. Lett. 88, 103507(2006) view pdf

 

76. “Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection”

        L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu

        Appl. Phys. Lett. 88, 092103(2006) view pdf

 

75. “Charge storage in a metal-oxide-semiconductor capacitor containing cobalt nanocrystals”

        Dengtao Zhao, Yan Zhu, and Jianlin Liu

        Solid-State Electronics 50, 268(2006) view pdf

 

74. “p-type ZnO films with solid-source phosphorus doping using molecular beam epitaxy”

        F. X. Xiu, Z. Yang, L.J. Mandalapu, J. L. Liu, and W. Beyermann

        Appl. Phys. Lett. 88, 052106(2006) view pdf

 

73. “Sb surfactant-mediated SiGe graded buffer layers for Ge diodes integrated on Si”

       J. L. Liu, Z. Yang, and K. L. Wang

       J.  Appl. Phys. 99, 024504(2006) view pdf

 

72. “Simulation of a Ge-Si Hetero-Nanocrystal Memory”

        D. T. Zhao, Y. Zhu, R. G. Li, and J. L. Liu

        IEEE Trans. on Nanotechnology 5, 37(2006) view pdf

 

71. “ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE”

        Faxian Xiu, Zheng Yang, Dengtao Zhao, Jianlin Liu, Khan A. Alim, Alexander A. Balandin,

        Mikhail E. Itkis, and Robert C. Haddon

        Journal of Crystal Growth 286, 61(2006) view pdf

 

2005

 

70. “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy”

        F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu

        Appl. Phys. Lett. 87, 252102(2005) view pdf

 

69. “Simulation of a cobalt silicide/Si hetero-nanocrystal memory”

        Dengtao Zhao, Yan Zhu, Ruigang Li, and Jianlin Liu

        Solid-State Electronics 49, 1974(2005) view pdf

 

68. “Phonon-hopping thermal conductivity reduction in quatum dot superlattices”

        Manu Shamsa, Weili Liu, Alexander Balandin, and Jianlin Liu

        Appl. Phys. Lett. 87, 202105(2005) view pdf

 

67. “High-mobility Sb-doped P-type ZnO by Molecular Beam Epitaxy”

        F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann

        Appl. Phys. Lett. 87, 152101(2005) view pdf

 

66.Electrical and Thermal Conductivity of Ge/Si Quantum Dot Superlattices”

        Y. Bao, W. L. Liu, M. Sharma, K. Alim, A. A. Balandin, and J. L. Liu

        Journal of The Electrochemical Society 152, 432(2005) view pdf

 

65. “Threshold voltage shift of heteronanocrystal floating gate flash memory”

        Yan Zhu, Dengtao Zhao, Ruigang Li, and Jianlin Liu

        J. Appl. Phys. 97, 034309(2005) view pdf

 

64. “The Effect of Plastic Strain Relaxation on the Morphology of Ge Quantum Dot Superlattices”

        J. L. Liu, K. L. Wang, Q. H. Xie, and S. G. Thomas

        J. Crystal Growth 274, 367(2005) view pdf

 

2004

 

63. “Optical properties of Ge/Si quantum dot superlattices”

        Zheng Yang, Yi Shi, Jianlin Liu, Bo Yan, Rong Zhang, Youdou Zheng, and Kanglong Wang

        Materials Letters 58, 3765(2004) view pdf

 

62. “Normal incident Mid-Infrared Ge Quantum Dot Photodetector”

        Fei Liu, Song Tong, J. L. Liu, and K. L. Wang,

        Journal of Electronic Materials 33, 846(2004) view pdf

 

61. “Tunable normal incident Ge quantum dot midinfrared photodetectors”

        S. Tong, F. Liu, A. Khitun, K. L. Wang, and J. L. Liu

        J. Appl. Phys. 96, 773(2004) view pdf

 

60. “Experimental Investigation of Hall mobility in Ge/Si Quantum Dot Superlattices”

        Y. Bao, A. A. Balandin, J. L. Liu, J. Liu, and Y. H. Xie

        Appl. Phys. Lett. 84, 3355(2004) view pdf

 

59. “On the modeling of lattice thermal conductivity in semiconductor quantum dot superlattices”

A.Khitun, J. L. Liu, K. L. Wang

         Appl. Phys. Lett. 84, 1762(2004) view pdf

 

2003

 

58.  “Strain and Phonon Confinement in Self-assembled Ge Quantum Dot Superlattices”

         Z. Yang, Y. Shi, J. L. Liu, B. Yan, Z. X. Huang, L. Pu, Y. D. Zheng, and K. L. Wang,

         Chin. Phys. Lett. 20, 2001 (2003) view pdf

 

57.  “Temperature effect on the formation of uniform self-assembled Ge dots”

        G.Jin, J.L.Liu, and K.L.Wang

        Appl. Phys. Lett. 83, 2847(2003) view pdf

 

56. “Cross-plane thermal conductivity of self-assembled Ge quantum dot superlattices”

        J.L.Liu, A. Khitun, K.L.Wang, W. L. Liu, G. Chen, Q. H. Xie, and S. G. Thomas

        Phys. Rev. B 67, 165333(2003) view pdf

 

1994-2002

 

55. "Measurements of anisotropic thermoelectric properties in superlattice"

        B. Yang, W. L. Liu, J. L. Liu, K. L. Wang, and G. Chen

        Appl. Phys. Lett. 81, 3588(2002) view pdf

 

54. “Optical phonons in self-assembled Ge quantum dot superlattices: strain relaxation effects”

        J.L.Liu, J.Wan, Z.M.Jiang, A.Khitun, and K.L.Wang

        J. Appl. Phys. 92, 6804(2002) view pdf

 

53. “Simultaneous Measurements of Seebeck Coefficient and Thermal Conductivity Across Superlattice”

       B.Yang, J.L.Liu, K.L.Wang, and G.Chen

       Appl. Phys. Lett. 80, 1758(2002) view pdf

 

52. “An effective compliant substrate for low-dislocation relaxed Si1-xGex growth

        Y.H.Luo, J.L.Liu, G.Jin, J.Wan, and K.L.Wang

         Appl.Phys.A 74, 699(2002) view pdf

 

51. “Normal-incidence Ge Quantum-dot Photodetectors at 1.5 Micron Based on Si Substrate”

       S. Tong, J.L.Liu, Jun Wan, and Kang L. Wang

       Appl. Phys. Lett. 80, 1189(2002) view pdf

 

50. “High-quality Ge Films on Si Substrates using Sb-surfactant-mediated graded SiGe buffers”

        J.L.Liu, S.Tong, Y.H.Luo, J.Wan, and K.L.Wang

        Appl. Phys. Lett. 79, 3431(2001) view pdf

 

49. “The effect of the long-range order in a quantum dot array on the in-plane lattice thermal conductivity”

A.Khitun, A.Balandin, J.L.Liu, and K.L.Wang

Superlattices and Microstructures Vol.30, 1(2001) view pdf

 

48. “Ge/Si Interdiffusion in the SiGe Dots and Wetting Layers”

        J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, K.L. Wang , X. Z. Liao, and J. Zou

        J. Appl. Phys. 90, 4290(2001) view pdf

 

47. “Effect of Interdiffusion on the Band Alignment of SiGe Dots”

        J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, K.L. Wang,  X. Z. Liao, and J. Zou

        Appl. Phys. Lett. 79, 1980(2001) view pdf

 

46. “High-quality strain-relaxed SiGe films grown with low temperature Si buffer”

       Y.H.Luo, J.Wan, R.L.Forrest, J.L.Liu, M.S.Goorsky, and K.L.Wang,  

       J. Appl. Phys. 89, 8279(2001) view pdf

 

45. “ Anisotropic Thermal Conductivity of Si/Ge Strained and Quantum Dot Superlattices”

         W.L.Liu, T.Borca-Tasciuc, G.Chen, J.L.Liu, and K.L.Wang

         J. Nanosci. Nanotech. 1, 39(2001) view pdf

 

44. “Band Alignments And Photon-induced Carriers Transfer from Wetting Layers to Ge Quantum

        Dots grown on Si(001)”

        J.Wan, G.L.Jin, Z.M.Jiang, Y.H.Luo, J.L.Liu, and K.L.Wang

        Appl. Phys. Lett. 78, 1763(2001) view pdf

 

43. “Growth of carbon nanotubes by gas source molecular beam epitaxy”

        J.Wan, Y.H.Luo, Sung D.Choi, R.G.Li, G.Jin, J.L.Liu, and K.L.Wang

        J. Appl. Phys. 89, 1973 (2001) view pdf

 

42. “Effective compliant substrate for low-dislocation relaxed SiGe growth”

       Y.H.Luo, J.L.Liu, G.Jin, J.Wan, K.L.Wang, C.D.Moore, M.S.Goorsky, C.Chih, and K.N.Tu

        Appl.Phys.Lett. 78, 1219(2001) view pdf

 

41. “Response to “Comment on ‘Optical and Acoustic Phonon Modes in Self-organized Ge Quantum Dot Superlattices’”

       J.L.Liu, G.Jin, Y.S.Tang, Y.H.Luo, K.L.Wang, and D.P.Yu

       Appl.Phys.Lett. 78, 1162(2001) view pdf

 

40. “Infrared Multi-Spectral Detection Using Si/SixGe1-x Quantum Well Infrared Photodetectors”

       D.Krapf, B.Adoram, J.Shappir , A.Sa’ar, S.G.Thomas, J.L.Liu and K.L.Wang

       Appl.Phys.Lett. 78, 495(2001) view pdf

 

39. “Compliant effect of low-temperature Si buffer for SiGe growth”

       Y.H.Luo, J.Wan, R.L.Forrest, J.L.Liu, G.Jin, M.S.Goorsky, and K.L.Wang

        Appl.Phys.Lett. 78, 454(2001) view pdf

 

38. “Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices”

        T.Borca-Tasciuc, W.L.Liu, J.L.Liu, T.F.Zeng, D.W.Song, C.D.Moore, G.Chen, K.L.Wang,

        M.S.Goorsky, T.Radetic, R.Gronsky, T.Koga, and M.S.Dresselhaus

        Superlattices and Microstructure Vol.28, 199(2000) view pdf

 

37. “Experimental proof-of-principle investigation of enhanced Z3DT in (001) oriented Si/Ge superlattices”

        T.Koga, S.B.Cronin, M.S.Dresselhaus, J.L.Liu, and K.L.Wang

        Appl.Phys.Lett. 77, 1490(2000) view pdf

 

36. “In-plane Lattice Thermal Conductivity of a Quantum Dot Superlattice”

       A.Khitun, A.Balandin, J.L.Liu, and K.L.Wang

       J.Appl.Phys. 88, 696(2000) view pdf

 

35. “Perfect alignment of self-organized Ge islands on pre-grown Si stripe mesas”

       G.Jin, J.L.Liu, S.G.Thomas, Y.H.Luo, and K.L.Wang

       Appl. Phys. A 70, 551(2000) view pdf

 

34. “Regimented placement of self-assembled Ge dots on selectively grown Si mesas”

       G.Jin, J.L.Liu, and K.L.Wang

        Appl.Phys.Lett. 76(24), 3591(2000) view pdf

 

33. “Optical and Acoustic Phonon Modes in Self-organized Ge Quantum Dot Superlattices”

        J.L.Liu, G.Jin, Y.S.Tang, Y.H.Luo, K.L.Wang, and D.P.Yu

        Appl.Phys.Lett. 76(5), 586(2000) view pdf

 

32. “Infrared Spectroscopy of Intraband Transitions in Ge/Si Quantum Dot Superlattice”

       W.G.Wu, J.L.Liu, Y.S.Tang, and K.L.Wang

       Superlattice and Microstructures 26(3), 219(1999) view pdf

 

31. “Response to Comment on “Raman Scattering from a Ge Dot Superlattice””

       J.L.Liu, Y.S.Tang, and K.L.Wang

       Appl.Phys.Lett. 75(22), 3574(1999) view pdf

 

30. “Controlled Arrangement of Self-organized Ge Islands on Patterned Si (001) Substrates”

       G.Jin, J.L.Liu, S.G.Thomas, Y.H.Luo, K.L.Wang, and Bich-Yen Nguyen

       Appl.Phys.Lett. 75(18), 2752(1999) view pdf

 

29. “Observation of Inter-sub-level Transition in Modulation-doped Ge Quantum Dots”

       J.L.Liu, W.G.Wu, A.Balandin, G.Jin, Y.H.Luo, S.G.Thomas, Y.Lu, and K.L.Wang

       Appl.Phys.Lett. 75(12), 1745(1999) view pdf

 

28. “A Surfactant-mediated Relaxed Si0.5Ge0.5 Graded Layer with a Very Low Threading Dislocation Density and Smooth Surface”

        J.L.Liu, C.D.Moore, G.D.U’Ren, Y.H.Luo, Y.Lu, G.Jin, S.G.Thomas, M.S.Goorsky, and K.L.Wang

        Appl.Phys.Lett. 75(11), 1586(1999) view pdf

 

27. “Growth and Study of Self-organized Ge Quantum Wires”

       G.Jin, Y.S.Tang, J.L.Liu, and K.L.Wang

       Appl.Phys.Lett. 74, 2471(1999) view pdf

 

26. “Raman Scattering from a Ge Dot Superlattice”

        J.L.Liu, Y.S.Tang, K.L.Wang, T.Radetic, and R.Gronsky

        Appl.Phys.Lett. 74(13), 1863(1999) view pdf

 

25. “Intersubband Absorption in Boron-doped Multiple Ge Quantum Dots”

       J.L.Liu, W.G.Wu, A.Balandin, G.L.Jin, and K.L.Wang

       Appl.Phys.Lett. 74(2), 185(1999) view pdf

 

24. “Growth of Si Whiskers on Au/Si (111) Substrate by Gas Source MBE”

       J.L.Liu, S.J.Cai, G.L.Jin, S.G.Thomas, and K.L.Wang

       J.Crystal.Growth 200, 106(1999) view pdf

 

23.  “Wirelike Growth of Si on An Au/Si (111) Substrate by Gas Source Molecular Beam Epitaxy”

J.L.Liu, S.J.Cai, G.L.Jin, and K.L.Wang

       Electrochemical and Solid-State Letters 1(4), 188(1998) view pdf

 

22.  “Research about Silicon Crystal Wires Growth by Vapor-liquid-solid Reaction Method”

Y.Lu, Y.Shi, J.L.Liu, F.Wang, S.M.Zhu, S.L.Gu, and Y.D.Zheng

Journal of Functional Materials & Devices 30(1), 31(1999). (In Chinese)

 

21.  “Study on Thermal Oxidation of Nanowires”

        J.L.Liu, Y.Lu, Y.Shi, S.L.Gu, R.L.Jiang, F.Wang, Y.D.Zheng

        Physica Status Solidi Vol.68, No.2, 441(1998) view pdf

 

20.  “Fabrication of Silicon Nanowires”

        J.L.Liu, Y.Lu, Y.Shi, S.L.Gu, R.L.Jiang, F.Wang, Y.D.Zheng

        Applied Physics A V66 N5, 539(1998) view pdf

 

19.  “Highly Selective Chemical Etching of Si vs. Si1-XGeX Using NH4OH Solution”

        F.Wang, Y.Shi, J.L.Liu, Y.Lu, S.L.Gu, and Y.D.Zheng

        Journal of the Electrochemical Society V144 N3, L37(1997) view pdf

 

18.  “Al/Si1-XGeX/Si Schottky Contacts with Controllable Barrier Heights

        R.L.Jiang, J.Li, X.C.Zhou, J.L.Liu, and Y.D.Zheng

        Chinese Journal of Semiconductor Vol.17, No.7, 541(1996).  (In Chinese)

 

17.  “Fabrication of Silicon Quantum Wires Using SiGe Heteroepitaxy”

        Y.Lu, Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, and Y.D.Zheng

        Research &Progress of SSE Vol.16, 201(1996). (In Chinese)

 

16.  “A Method for Fabricating Silicon Quantum Wires Based on SiGe/Si Heterostructure”

        J.L.Liu, Y.Shi, F.Wang, Y.Lu, R.Zhang, P.Han, S.L.Gu, and Y.D.Zheng

        Appl.Phys.Lett. V68 N3, 352(1996) view pdf

 

15.  “Properties of Schottky Contact of Al on SiGe Alloys”

        R.L.Jiang, J.L.Liu, J.Li, Y.Shi, and Y.D.Zheng

        Appl.Phys.Lett. V68 N8, 1123(1996) view pdf

 

14.  “Realization of Silicon Quantum Wires Based on Si/SiGe/Si Heterostructure”

        J.L.Liu, Y.Shi, F.Wang, Y.Lu, S.L.Gu, and Y.D.Zheng

        Zeitschrift Fur Physik B, V100 N4, 489(1996) view pdf

 

13.  “Study of Dry Oxidation of Triangle-shaped Silicon Nanostructure”

        J.L.Liu, Y.Shi, F.Wang, Y.Lu, S.L.Gu, R.Zhang, and Y.D.Zheng

        Appl.Phys.Lett. V69 N12, 1761(1996) view pdf

 

12.  “Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation”

         J.L.Liu, Y.Shi, F.Wang, Y.Lu, R.Zhang, S.L.Gu, P.Han, and Y.D.Zheng

        Appl. Phys. A, V63 N4, 371(1996) view pdf

 

11.  “Ultra-fine Silicon Quantum Wires with Si/SiO2 Heterostructure”

        Y.Shi, J.L.Liu, F.Wang, R.Zhang, P.Han, S.M.Zhu, B.H.Mao, and Y.D.Zheng

        Chinese Sci. Bull. 40(18), 1727(1995). (In Chinese)

 

10.  “Silicon Quantum Wire Array Embedded in Silicon Dioxide”

        Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, L.Q.Hu, and Y.D.Zheng

        Chinese Journal of Semiconductor Vol.16, No.10, 798(1995). (In Chinese)

 

9.  “Fabrication of Silicon Quantum Wires Using Silicon Processing”

        Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, S.M.Zhu, and Y.D.Zheng

        High Technology Lett. 5(10), 32(1995).  (In Chinese)

 

8.   “Fabrication of Silicon Quantum Wires Using Silicon Processing”

       Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, S.M.Zhu, and Y.D.Zheng

       High Technology Lett. 1(1), 25(1995) view pdf

 

7.       “Fabrication of Silicon Quantum Wires by Anisotropic Wet Chemical Etching and Thermal Oxidation”

 J.L.Liu, Y.Shi, F.Wang, R.Zhang, P.Han, B.H.Mao, and Y.D.Zheng

        J.Vac.Sci.&Technol.B V13 N5, 2137(1995) view pdf

 

6.       “Formation of Luminescence Porous Silicon by 2-step Chemical Immersion and Role of NO2 in Etching”

        C.E.Liu, J.L.Liu, J.L.Wang, and X.M.Bao

        Science in China Series A V24 N7, 709(1994). (In Chinese)

 

5.       “Formation of Luminescence Porous Silicon by 2-step Chemical Immersion and Role of NO2 in Etching”

        C.E.Liu, J.L.Liu, J.L.Wang, and X.M.Bao

        Science in China Series A V37 N10, 1210(1994) view pdf

 

4.   “Growth and Transport Property of Si/Si0.7Ge0.3/Si p-type Modulation-doped Double Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, H.F.Li, and H.Z.Zheng

       Chinese Journal of Semiconductor Vol.15, No.7, 501(1994). (In Chinese)

 

3.   “High Hole Mobility Si/Si1-XGeX/Si Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, G.Z.Zheng, Y.Y.Wei, and X.C.Shen

       Chinese Physics Letters V11 N2, 116(1994) view pdf

 

2.   “Hole Transport Properties of Si/Si1-XGeX Modulation-doped Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, H.F.Li, and H.Z.Zheng

       Superlattice and Microstructures V16 N4, 375(1994) view pdf

 

1.   “Transport Properties of Si/Si1-XGeX/Si p-type Modulation Doped Double Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, H.F.Li, and H.Z.Zheng

       J.Appl.Phys. V76 N4, 2544(1994) view pdf