Si-based Photonics
Researchers:
Jianlin Liu, Kang L. Wang (UCLA)
Motivation
of Research: People have a reason to laugh at Si’s
inability as an efficient emitter due to its god-given indirect bandgap as of
now. But no one has argued the fact that Si-based materials such as SiGe and Ge thin films, nanowires, and quantum dots have outstanding ability for
detectors or solar cells.
Available
Publications:
Incomplete
Overview: Our earlier effort in this field focused on Ge
thin films and Ge quantum dots on Si for photodetection. In the thin film side, we developed a
reliable buffer layer technique by combining composition grading with Sb surfactant to have achieved high-quality Ge thin films on Si with very low threading dislocation
densities. This effort also led to high-efficient Ge photodetectors on Si. In the self-assembled Ge quantum dots side, we spent a great deal of effort to
understand the infrared absorption and phonon properties of these quantum dots.
We then developed these Ge quantum dot superlattice into photodetectors
in the mid-, and near-infrared ranges. Interestingly, these devices and other
novel structured devices, if operated in a different way, they are called solar
cells. Of course, it is interesting to prove it…
J64. “The Effect of Plastic
Strain Relaxation on the Morphology of Ge Quantum Dot
Superlattices”
J. L. Liu, K. L. Wang, Q. H. Xie, and
S. G. Thomas
J. Crystal Growth, 274, 367(2005)
J63. “Optical properties of
Ge/Si quantum dot superlattices”
Zheng Yang, Yi Shi, Jianlin Liu, Bo
Yan, Rong Zhang, Youdou Zheng, and Kanglong Wang
Materials Letters 58, 3765(2004)
J62. “Normal incident
Mid-Infrared Ge Quantum Dot Photodetector”
Fei Liu, Song Tong, J. L. Liu, and K.
L. Wang,
Journal of Electronic Materials 33, 846(2004)
J61. “Tunable normal
incident Ge quantum dot midinfrared
photodetectors”
S. Tong, F. Liu, A. Khitun, K. L. Wang,
and J. L. Liu
J. Appl. Phys. 96, 773(2004)
J58.
“Strain and
Phonon Confinement in Self-assembled Ge Quantum Dot
Superlattices”
Z. Yang, Y. Shi, J. L. Liu, B. Yan, Z. X. Huang, L. Pu, Y. D.
Zheng, and K. L. Wang,
Chin. Phys. Lett. 20, 2001 (2003)
J57.
“Temperature
effect on the formation of uniform self-assembled Ge
dots”
G.Jin, J.L.Liu,
and K.L.Wang
Appl. Phys. Lett. 83, 2847(2003)
J54. “Optical phonons in
self-assembled Ge quantum dot superlattices:
strain relaxation effects”
J.L.Liu, J.Wan,
Z.M.Jiang, A.Khitun, and K.L.Wang
J. Appl. Phys. 92, 6804(2002)
J52. “An effective
compliant substrate for low-dislocation relaxed Si1-xGex growth”
Y.H.Luo, J.L.Liu,
G.Jin, J.Wan, and K.L.Wang
Appl.Phys.A 74, 699(2002)
J51. “Normal-incidence Ge Quantum-dot Photodetectors at
1.5 Micron Based on Si Substrate”
S. Tong, J.L.Liu, Jun Wan, and Kang L. Wang
Appl. Phys. Lett. 80, 1189(2002)
J50. “High-quality Ge Films on Si Substrates using Sb-surfactant-mediated
graded SiGe buffers”
J.L.Liu, S.Tong,
Y.H.Luo, J.Wan, and K.L.Wang
Appl. Phys. Lett.
79, 3431(2001)
J48. “Ge/Si
Interdiffusion in the SiGe
Dots and Wetting Layers”
J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, K.L. Wang , X. Z. Liao, and J. Zou
J. Appl. Phys. 90, 4290(2001)
J47. “Effect of Interdiffusion on the Band Alignment of SiGe
Dots”
J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, K.L. Wang, X. Z. Liao, and J. Zou
Appl. Phys. Lett.
79, 1980(2001)
J46. “High-quality
strain-relaxed SiGe films grown with low temperature
Si buffer”
Y.H.Luo, J.Wan, R.L.Forrest, J.L.Liu, M.S.Goorsky, and K.L.Wang,
J. Appl. Phys. 89, 8279(2001)
J.Wan, G.L.Jin, Z.M.Jiang, Y.H.Luo, J.L.Liu,
and K.L.Wang
Appl. Phys. Lett. 78, 1763(2001)
J42. “Effective compliant
substrate for low-dislocation relaxed SiGe growth”
Y.H.Luo, J.L.Liu,
G.Jin, J.Wan, K.L.Wang, C.D.Moore, M.S.Goorsky, C.Chih, and K.N.Tu
Appl.Phys.Lett. 78, 1219(2001)
J.L.Liu, G.Jin,
Y.S.Tang, Y.H.Luo, K.L.Wang, and D.P.Yu
Appl.Phys.Lett. 78, 1162(2001)
J40. “Infrared
Multi-Spectral Detection Using Si/SixGe1-x Quantum Well
Infrared Photodetectors”
Appl.Phys.Lett. 78, 495(2001)
J39. “Compliant effect of
low-temperature Si buffer for SiGe growth”
Y.H.Luo, J.Wan, R.L.Forrest, J.L.Liu, G.Jin, M.S.Goorsky, and K.L.Wang
Appl.Phys.Lett. 78, 454(2001)
J35. “Perfect alignment of
self-organized Ge islands on pre-grown Si stripe
mesas”
G.Jin, J.L.Liu,
S.G.Thomas, Y.H.Luo, and K.L.Wang
Appl. Phys. A, 70, 551(2000)
J34. “Regimented placement
of self-assembled Ge dots on selectively grown Si
mesas”
G.Jin, J.L.Liu,
and K.L.Wang
Appl.Phys.Lett. 76(24), 3591(2000)
J33. “Optical and Acoustic
Phonon Modes in Self-organized Ge Quantum Dot
Superlattices”
J.L.Liu, G.Jin,
Y.S.Tang, Y.H.Luo, K.L.Wang, and D.P.Yu
Appl.Phys.Lett. 76(5), 586(2000)
J32. “Infrared Spectroscopy
of Intraband Transitions in Ge/Si
Quantum Dot Superlattice”
W.G.Wu, J.L.Liu,
Y.S.Tang, and K.L.Wang
Superlattice and Microstructures, 26(3),
219(1999)
J31. “Response to Comment
on “Raman Scattering from a Ge Dot Superlattice””
J.L.Liu, Y.S.Tang,
and K.L.Wang
Appl.Phys.Lett. 75(22), 3574(1999)
J30. “Controlled
Arrangement of Self-organized Ge Islands on Patterned
Si (001) Substrates”
G.Jin, J.L.Liu,
S.G.Thomas, Y.H.Luo, K.L.Wang, and Bich-Yen Nguyen
Appl.Phys.Lett. 75(18), 2752(1999)
J29. “Observation of
Inter-sub-level Transition in Modulation-doped Ge
Quantum Dots”
J.L.Liu, W.G.Wu,
A.Balandin, G.Jin, Y.H.Luo, S.G.Thomas, Y.Lu, and K.L.Wang
Appl.Phys.Lett. 75(12), 1745(1999)
J.L.Liu, C.D.Moore,
G.D.U’Ren, Y.H.Luo, Y.Lu, G.Jin, S.G.Thomas,
M.S.Goorsky, and K.L.Wang
Appl.Phys.Lett. 75(11), 1586(1999)
J26. “Raman Scattering from
a Ge Dot Superlattice”
J.L.Liu, Y.S.Tang,
K.L.Wang, T.Radetic, and R.Gronsky
Appl.Phys.Lett. 74(13), 1863(1999)
J25. “Intersubband
Absorption in Boron-doped Multiple Ge Quantum Dots”
J.L.Liu, W.G.Wu,
A.Balandin, G.L.Jin, and K.L.Wang
Appl.Phys.Lett. 74(2), 185(1999)