Si Nanowires

Researchers: Jianlin Liu, Yi Shi (Nanjing University), You-Dou Zheng (Nanjing University), Kang L. Wang (UCLA)

Motivation of Research:

Si nanowires are one of the most important nanostructures for future scaled electronic devices, solar cells, and other applications. The fabrication of these nanowires includes bottom-up and top-down approaches. Assembling and making them into functional devices are extremely interesting and potentially rewarding.

Available Publications:

Incomplete Overview: Our effort in this area began with a top-down method by sequential processes including optical lithography pattern definition, etching and oxidation. Our next effort is the first demonstration of vapor-liquid-solid Si nanowires by molecular beam epitaxy. Our current interest includes using lithographically defined Si nanowires for channels of scaled memory devices, etc. Please refer to the following publications:

J24. “Growth of Si Whiskers on Au/Si (111) Substrate by Gas Source MBE”

J.L.Liu, S.J.Cai, G.L.Jin, S.G.Thomas, and K.L.Wang

J.Crystal.Growth, 200, 106(1999)

J22. “Research about Silicon Crystal Wires Growth by Vapor-liquid-solid Reaction Method”

Y.Lu, Y.Shi, J.L.Liu, F.Wang, S.M.Zhu, S.L.Gu, and Y.D.Zheng

Journal of Functional Materials & Devices, 30(1), 31(1999). (In Chinese)

J23. “Wirelike Growth of Si on An Au/Si (111) Substrate by Gas Source Molecular Beam Epitaxy”

J.L.Liu, S.J.Cai, G.L.Jin, and K.L.Wang

Electrochemical and Solid-State Letters, 1(4), 188(1998).

J21. “Study on Thermal Oxidation of Nanowires”

J.L.Liu, Y.Lu, Y.Shi, S.L.Gu, R.L.Jiang, F.Wang, Y.D.Zheng

Physica Status Solidi, Vol.68, No.2, 441(1998)

J20. “Fabrication of Silicon Nanowires”

J.L.Liu, Y.Lu, Y.Shi, S.L.Gu, R.L.Jiang, F.Wang, Y.D.Zheng

Applied Physics A, V66 N5, 539(1998).

J17. “Fabrication of Silicon Quantum Wires Using SiGe Heteroepitaxy”

Y.Lu, Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, and Y.D.Zheng

Research &Progress of SSE, Vol.16, 201(1996). (In Chinese)

J16. “A Method for Fabricating Silicon Quantum Wires Based on SiGe/Si Heterostructure”

J.L.Liu, Y.Shi, F.Wang, Y.Lu, R.Zhang, P.Han, S.L.Gu, and Y.D.Zheng

Appl.Phys.Lett. V68 N3, 352(1996).

J14. “Realization of Silicon Quantum Wires Based on Si/SiGe/Si Heterostructure”

J.L.Liu, Y.Shi, F.Wang, Y.Lu, S.L.Gu, and Y.D.Zheng

Zeitschrift Fur Physik B, V100 N4, 489(1996).

J13. “Study of Dry Oxidation of Triangle-shaped Silicon Nanostructure”

J.L.Liu, Y.Shi, F.Wang, Y.Lu, S.L.Gu, R.Zhang, and Y.D.Zheng

Appl.Phys.Lett. V69 N12, 1761(1996).

J12. “Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation”

J.L.Liu, Y.Shi, F.Wang, Y.Lu, R.Zhang, S.L.Gu, P.Han, and Y.D.Zheng

Appl. Phys. A, V63 N4, 371(1996).

J11. “Ultra-fine Silicon Quantum Wires with Si/SiO₂ Heterostructure”

Y.Shi, J.L.Liu, F.Wang, R.Zhang, P.Han, S.M.Zhu, B.H.Mao, and Y.D.Zheng

Chinese Sci. Bull. 40(18), 1727(1995). (In Chinese)

J10. “Silicon Quantum Wire Array Embedded in Silicon Dioxide”

Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, L.Q.Hu, and Y.D.Zheng

Chinese Journal of Semiconductor, Vol.16, No.10, 798(1995). (In Chinese)

J9. “Fabrication of Silicon Quantum Wires Using Silicon Processing”

Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, S.M.Zhu, and Y.D.Zheng

High Technology Lett. 5(10), 32(1995). (In Chinese)

J8. “Fabrication of Silicon Quantum Wires Using Silicon Processing”

Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, S.M.Zhu, and Y.D.Zheng

High Technology Lett. 1(1), 25(1995).

J7. “Fabrication of Silicon Quantum Wires by Anisotropic Wet Chemical Etching and Thermal Oxidation”

J.L.Liu, Y.Shi, F.Wang, R.Zhang, P.Han, B.H.Mao, and Y.D.Zheng

J.Vac.Sci.&Technol.B, V13 N5, 2137(1995).