ZnO Optoelectronics
Researchers: Jianlin Liu, Faxian Xiu, Leela Mandalapu, Zheng Yang, Jae-hong
Lim, Sheng Chu, Lin Li, Jieying Kong, Zheng Zuo, Jianze Zhao, Guoping Wang, Jian Huang, Monzur Morshed,
Fan Gao, Mohammad Suja, Sunayna
Bashar, Longxing Su, Wenhao Shi
Collaborators: Dave Look (Wright State
University), Leonid Chernyak (UCF), Zhanghai Chen (Fudan University), Paul Yu (UCSD), Roger
Lake (UCR)
Motivation of Research:
ZnO is a direct, wideband gap material that
shall emit or absorb light in ultraviolet region. The intriguing exciton
property drives effort for room-temperature excitonic lasers. With Mg or Cd, ZnO-based alloys can have wider or narrower bandgaps. ZnO is also an excellent transparent material…However,
p-type doing has not been reliable enough for this material to thrive yet.
Available Publications:
Incomplete Overview: With
plasma-assisted molecular beam epitaxy, we began to develop doping of ZnO thin films toward p-type. Earlier, we demonstrated that
Sb and P can be used to obtain p-type films by MBE. We then achieved some
hetero-junction and homojunction diode devices, such as photodetectors, LEDs,
and lasers based on Sb-doped p-type ZnO thin films.
Some of contributions to the field of ZnO
semiconductor lasers include:
·
First
demonstration of ZnO Schottky diode Whispering
Gallery Mode lasers (J176)
·
First
demonstration of ZnO metal-semiconductor-metal random
lasers (J161, J179, J184)
·
First
demonstration of ZnO Schottky diode random lasers (J164)
·
First
demonstration of electrically pumped nitrogen doped p-type ZnO
nanowire homojunction random lasers (J155)
·
First
demonstration of electrically pumped ZnO nanowire waveguide
lasers (J131)
·
First
demonstration of ZnO homojunction random lasers
(J106)
Please refer to the following existing papers
for details, but the research in this area is still necessary to achieve
high-efficiency optoelectronic devices.
J184.
“Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices”
M. Suja, B. Debnath, S. B. Bashar, L.
X. Su, R. Laker, and J. L. Liu
Applied Surface Science 439,
525(2018) view pdf
J182. “Visible-Blind
UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO
Vertical Heterostructures”
G. Li, M. Suja, M. Chen, E. Bekyarova,
R. C. Haddon, J. L. Liu, and M. E. Itkis
ACS Appl. Mater. Interfaces 9,
37094(2017) view
pdf
J179.
“Electrically driven deep ultraviolet MgZnO lasers at
room temperature”
M. Suja, S. B. Bashar, B. Debnath, L.
X. Su, W. H. Shi, R. Lake, and J. L. Liu
Scientific Reports 7, 2677(2017) view pdf
J176. “Electrically Pumped Whispering Gallery Mode
Lasing from Au/ZnO Microwire Schottky Junction”
Sunayna B. Bashar, Chunxia Wu, Mohammad Suja, Hao
Tian, Wenhao Shi, and Jianlin Liu
Advanced Optical
Materials 4, 2063(2016) view pdf
J175.
“Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode”
S. B. Bashar, M. Suja, W. H. Shi, and
J. L. Liu
Appl. Phys. Lett. 109, 192101(2016) view pdf
J171. “Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes”
F. Gao, D. K. Zhang, J. Y. Wang, H.
B. Sun, Y. Yin, Y. Sheng, S. C. Yan, B. Yan, C. H. Sui,
Y. D. Zheng, Y. Shi, and J. L. Liu
Appl. Phys. Lett. 108, 261103 (2016) view pdf
J170. “An
Sb-doped p-type ZnO nanowire based random laser
diode”
S. B. Bashar, M. Suja, M. Morshed, F.
Gao and J. L. Liu
Nanotechnology 27, 065204(2016) view pdf
J164. “Electrically
pumped random lasing based on an Au-ZnO nanowire
Schottky junction”
F. Gao, M. M. Morshed, S. B. Bashar, Y. D. Zheng, Y. Shi, and Jianlin Liu
Nanoscale 7, 9505(2015) view pdf
J163.
“Realization of Cu-doped p-type ZnO thin films by
molecular beam epitaxy”
M. Suja, S. B. Bashar, M. M. Morshed,
and J. L. Liu
ACS Applied Materials and Interfaces
7, 8894(2015) view
pdf
J162.
“Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single heterostructure diode”
M. M. Morshed, Z. Zuo, J. Huang, and
J. Liu
Appl. Phys. A, 118, 817(2015) view pdf
J161. “Ultraviolet random lasing from asymmetrically
contacted MgZnO metal-semiconductor-metal Device”
M. M. Morshed, M. Suja, Z. Zuo, and
J. L. Liu
Appl. Phys. Lett. 105, 211107(2014) view pdf
J160.
“Photoluminescence study of nitrogen doped p-type MgxZn1-xO
nano crystalline thin film grown by
plasma assisted molecular beam epitaxy”
M. M. Morshed, Z. Zuo, J. Huang, J.
Zheng, Q. Lin, X. Yan, and J.L. Liu
Appl. Phys. A 117, 1467(2014), DOI
10.1007/s00339-014-8576-z view pdf
J159.
“Distributed Bragg reflector assisted low-threshold ZnO
nanowire random laser diode”
J. Huang, M. Morshed, Z. Zuo, and J.
L. Liu
Appl. Phys. Lett. 104, 131107(2014) view pdf
J155. “ZnO p-n homojunction random laser diode based on
nitrogen-doped p-type nanowires”
J. Huang, S. Chu, J. Y. Kong, L.
Zhang, C. M. Schwarz, G. P. Wang, L. Chernyak, Z. H.
Chen, and J. L. Liu
Advanced Optical Materials 1(2),
179(2013) view pdf
J152. “Use of distributed Bragg reflectors to
enhance Fabry–Pérot lasing in vertically aligned ZnO nanowires”
J. Y. Kong, S. Chu, J.
Huang, M. Olmedo, W. H. Zhou, L. Zhang, Z. H. Chen, and J. L. Liu
Appl. Phys. A 110,
23(2013) view pdf
J144. “Noble
metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence”
Sheng Chu, Jingjian
Ren, Dong Yan, Jian Huang, and Jianlin Liu
Appl. Phys. Lett. 101, 043122(2012) view pdf
J143.
“Low-threshold ZnO random lasing in a homojunction
diode with embedded double heterostructure”
Jieying
Kong, Sheng Chu, Zheng Zuo, Jingjian
Ren, Mario Olmedo, Jianlin Liu
Applied Physics A 107, 971(2012) view pdf
J135.
“Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires”
C. Schwarz, E. Flitsiyan,
L. Chernyak, V. Casian, R. Schneck, Z. Dashevsky, S. Chu,
and J. L. Liu
J. Appl. Phys. 110, 056108(2011) view pdf
J131. “Electrically
pumped waveguide lasing from ZnO nanowires”
Sheng Chu, Guoping
Wang, Weihang Zhou, Yuqing
Lin, Leonid Chernyak, Jianze
Zhao, Jieying Kong, Lin Li,
Jingjian Ren and Jianlin Liu
Nature Nanotechnology 6, 506(2011).
DOI: 10.1038/NNANO.2011.97 view pdf
J130.
“Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure
in ZnO homojunction light emitting diode”
Sheng Chu, Jianze Zhao, Zheng Zuo,
Jieying Kong, Lin Li, and Jianlin Liu
J. App. Phys. 109, 123110(2011) view pdf
J129.
“Synthesis and characterization of Ag-doped p-type ZnO
nanowires”
Guoping Wang, Sheng Chu, Ning Zhan,
Huimei Zhou, Jianlin Liu
Appl. Phys. A 103, 951(2011) view pdf
J123. “ZnO homojunction photodiodes based on Sb-doped
p-type nanowire array and n-type film for ultraviolet detection”
Guoping Wang, Sheng Chu, Ning Zhan,
Yuqing Lin, Leonid Chernyak, and Jianlin Liu
Appl. Phys. Lett. 98, 041107(2011) view pdf
J122.
“Minority carrier transport in p-ZnO nanowires”
Y. Lin, M. Shatkhin, E. Flitsiyan, L.
Chernyak, Z. Dashevsky, S. Chu, and J. L. Liu
J. Appl. Phys. 109, 016107(2011) view pdf
J120. “Homobuffer thickness effect on the background electron
carrier concentration of epitaxial ZnO thin films”
Z. Yang, H. M. Zhou, W. V. Chen, L.
Li, J. Z. Zhao, P. K. L. Yu, and J. L. Liu
J. Appl. Phys. 108, 066101(2010) view pdf
J117. “Thermal stability of CdZnO thin films grown by molecular-beam epitaxy”
L. Li, Z. Yang, Z. Zuo, J.H. Lim, and J.L. Liu
Applied Surface
Science 256, 4734(2010)
J116. “ZnO:Sb/ZnO:Ga Light
Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy”
Zheng Yang, Sheng Chu, Winnie V. Chen,
Lin Li, Jieying Kong, Jingjian Ren, Paul K. L. Yu, and Jianlin Liu
Applied Physics Express 3, 032101(2010)
C61. “Study of rapid thermal annealing effect on CdZnO thin films grown on Si substrate”
L. Li, Z. Yang, Z. Zuo, J. Y. Kong, and J. L. Liu
North
American MBE conference 2009, Princeton University, American Vacuum Society
J. Vac.
Sci. Tech. B 28(3), C3D13, 1071(2010), May/June, 2010
C60. “Ultraviolet light emissions in MgZnO/ZnO double heterojunction
diodes by molecular beam epitaxy”
Jieying Kong, Lin Li, Zheng Yang, and
Jianlin Liu
North
American MBE conference 2009, Princeton University, American Vacuum Society
J. Vac.
Sci. Tech. B 28(3), C3D10, 1071(2010), May/June, 2010
Zheng
Yang and Jianlin Liu
North
American MBE conference 2009, Princeton University, American Vacuum Society
J. Vac.
Sci. Tech. B 28(3), C3D6, 1071(2010), May/June, 2010
C58. “Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si
heterojunction diodes”
Lin Li,
Zheng Yang and Jianlin Liu
MRS Fall
2009, Boston, USA, Mater. Res. Soc. Symp.
Proc. Vol. 1201, 1201-H01-09, 2010
J114. “Temperature-dependent
photoluminescence of CdZnO thin films grown by
molecular-beam epitaxy”
Z. Yang, L. Li, Z. Zuo, J.L. Liu
Journal of Crystal Growth 312,
68(2009)
J113. “Blue
electroluminescence from ZnO based heterojunction
diodes with CdZnO active layers”
L. Li, Z. Yang, J. Y. Kong, and J. L.
Liu
Appl. Phys. Lett. 95, 232117(2009)
J109. “Ga-related
photoluminescence lines in Ga-doped ZnO grown by
plasma-assisted molecular-beam epitaxy”
Z. Yang, D. C. Look, and J. L. Liu
Appl. Phys. Lett. 94, 072101(2009)
Z. Yang, J.-H. Lim, S. Chu, Z. Zuo,
and J. L. Liu
Applied Surface Science 255,
3375(2008)
J106. “Electrically
pumped ZnO ultraviolet diode lasers on Si”
Sheng Chu, Mario
Olmedo, Zheng Yang, Jieying Kong, and
Appl. Phys. Lett. 93,
181106(2008)
J105. “Dominant ultraviolet light emissions in
packed ZnO columnar homojunction diodes”
Jieying Kong, Sheng Chu,
Mario Olmedo, Lin Li, Zheng Yang, and
Appl. Phys. Lett. 93,
132113(2008)
J103. “Generation of
nitrogen acceptors in ZnO using pulse thermal
processing”
Jun Xu, Ronald Ott,
Adrian S. Sabau, Zhengwei
Pan, Faxian Xiu, Jianlin Liu, Jean-Marie Erie, and
David P. Norton
Appl. Phys. Lett. 92,
151112(2008)
J102. “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes”
S. Chu, J. H. Lim, L. J. Mandalapu,
Z. Yang, L. Li and J. L. Liu
Appl. Phys. Lett. 92, 152103(2008)
J101. “Ultraviolet emission from Sb-doped p-type ZnO-based
heterojunction light emitting diodes”
L. J.
Mandalapu, Z. Yang, S. Chu, and J. L. Liu
Appl. Phys.
Lett. 92, 122101(2008)
J100. “Electron beam
induced current profiling of ZnO p-n homojunctions”
L. Chernyak, C.
Schwarz, E. S. Flitsiyan, S. Chu, J. L. Liu, and K. Gartsman
Appl. Phys.
Lett. 92, 102106(2008)
J96. “Response to “Comment
on “p-type behavior from Sb-doped ZnO heterojunction
diodes”
L. J. Mandalapu, and J. L. Liu
Appl. Phys. Lett. 91, 136102(2007)
J95. “Al/Ti contacts to Sb-doped p-ZnO”
L. J. Mandalapu, F. X. Xiu, Z. Yang, and
J. L. Liu
J. Applied Physics 102, 023716(2007)
J94. “Influence of electron
injection on the temporal response of ZnO
homo-junction diodes”
O. Lopatiuk-Tirpak, G. Nootz, E. Flitsiyan, L. Chernyak, L. J. Mandalapu, Z. Yang, J. L.
Liu,
K. Gartsman, and A. Osinsky
Appl.
Phys. Lett. 042115(2007)
J93. “Ultraviolet photoconductive
detectors based on Ga-doped ZnO by molecular beam
epitaxy”
L. J. Mandalapu, F. X. Xiu, Z. Yang, and
J. L. Liu
Solid-state Electronics 51, 1014(2007)
J92. “Low-resistivity Au/Ni
contacts to Sb-doped p-type ZnO”
L. J. Mandalapu, Z. Yang, and J. L. Liu
Appl. Phys. Lett. 90, 252103(2007)
F. X. Xiu, and J. L. Liu
Appl. Phys. Lett. 90, 116103(2007)
C50. “p-type ZnO by Sb doping for PN-junction photodetectors”
J. L. Liu, F. X. Xiu, L. J. Mandalapu,
and Z. Yang
Photonics West 2006, San Jose, USA, Jan
21-26, 2006
J87. “Influence of the
electron injection on the photoresponse of ZnO homojunction diode”
O. Lopatiuk-Tirpak, L. Chernyak, L. Mandalapu, Z. Yang, J. L.
Liu, K. Gartsman, Y. Feldman,
Z. Dashvsky
Appl.
Phys. Lett. 89, 142114(2006)
J86. “Study of minority carrier diffusion length increase in p-type ZnO:Sb”
O. Lopatiuk-Tirpak, L. Chernyak, F. X. Xiu, J. L. Liu, S. Tan,
F. Ren, S. Pearton, K. Gartsman,
Y.
Feldman, A. Osinsky, P. Chow
J. Appl.
Phys. 100, 086101(2006)
J84. “Bi-induced acceptor
states in ZnO by molecular beam epitaxy”
F. X. Xiu, L. J. Mandalapu, Z. Yang, J.
L. Liu, G. F. Liu, and J. A. Yarmoff
Appl. Phys. Lett. 89, 052103(2006)
J82. “Carrier concentration
dependence of acceptor binding energy in p-type ZnO”
O. Lopatiuk-Tirpak,
W. V. Schoenfeld, L. Chernyak, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S. J. Pearton,
A. Osinsky
and P. Chow
Appl. Phys. Lett. 88, 202110(2006)
J81. “Donor and acceptor
competitions in phosphorus-doped ZnO”
F. X. Xiu, Z. Yang, L. J. Mandalapu,
and J. L. Liu
Appl. Phys. Lett. 88, 152116(2006)
Vladimir A. Fonoberov, Khan A. Alim, Alexander A. Balandin, Faxian Xiu and Jianlin Liu
Phys. Rev. B 73,
165317(2006)
J78. “p-type behavior from
Sb-doped ZnO heterojunction photodiode”
L. J. Mandalapu, F. X. Xiu, Z. Yang, D.
T. Zhao, and J. L. Liu
Appl. Phys. Lett. 88, 112108(2006)
J76. “Homojunction
photodiodes based on Sb-doped p-type ZnO for
ultraviolet detection”
L. J. Mandalapu, Z. Yang, F. X. Xiu, D.
T. Zhao, and J. L. Liu
Appl. Phys. Lett. 88, 092103(2006)
J74. “p-type ZnO films with solid-source phosphorus doping using
molecular beam epitaxy”
F. X. Xiu, Z. Yang, L.J. Mandalapu, J.
L. Liu, and W. Beyermann
Appl. Phys. Lett. 88, 052106(2006)
J71. “ZnO
growth on Si with low-temperature ZnO buffer layers
by ECR-assisted MBE”
Faxian Xiu, Zheng Yang, Dengtao Zhao,
Jianlin Liu, Khan A. Alim, Alexander A. Balandin,
Mikhail E. Itkis, and Robert C. Haddon
Journal of Crystal Growth 286, 61(2006)
C48. “Characteristics
of phosphorus doped p-type ZnO by MBE”
F. X. Xiu, Z. Yang, L. J. Mandalapu,
and J. L. Liu
MRS Fall 2005, Boston, USA, November
27-December 1, 2005
C47. “ZnO growth on Si with low-temperature ZnO buffer layers by
ECR-assisted MBE”
F. X. Xiu, Z. Yang, D. T. Zhao, J. L. Liu, K.
Alim, A. A. Balandin, M. Itkis, and R. Haddon
EMC 2005, Santa Barbara, California,
June 22-24, 2005
J70. “Photoluminescence
study of Sb-doped p-type ZnO films by molecular-beam
epitaxy”
F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu
Appl. Phys. Lett. 87, 252102(2005)
J67. “High-mobility Sb-doped P-type ZnO by
Molecular Beam Epitaxy”
F. X.
Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J.
L. Liu, and W. P. Beyermann
Appl. Phys. Lett. 87, 152101(2005)