Novel Engineered
Nanocrystals for Nonvolatile Memory
Researchers: Jianlin Liu,
Ruigang Li, Dengtao Zhao, Yan Zhu, Bei Li, Huimei Zhou, Jingjian Ren, Mario
Olmedo
Collaborators: Roger Lake
(UCR), Yi Shi (Nanjing University), Jane Chang (UCLA), Feng Liu (U. Utah), Chongwu Zhou (USC), Jeanie Lau (UCR), Jory Yarmoff (UCR), Jian-Guo Zheng
(UCI)
Motivation of Research: To
search future nonvolatile memory technologies, many recognize that nanocrystal
memory shall be a straightforward solution to state-of-the-art flash memory,
which will soon run into trouble. Though Si nanocrystals as floating gate
already outperform continuous floating gate for this application, assembly of
other novel nanocrystals may keep the journey going into future.
Available Publications:
Incomplete Overview: We
proposed and demonstrated the use of various silicide-based nanocrystals as
floating gate for memory applications. Our effort in this field also includes
the demonstration of Ge/Si heteronanocrystal (or
core-shell nanocrystal) memories. In the mean time, we also used simple
numerical simulations to understand the new device operation principles. We are
currently working to further engineer new nanocrystals and their ordered arrays
for memory applications. Please refer to the following publications:
J156.
“Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using a single
triangular-shaped Si nanowire channel”
Jingjian
Ren, Dong Yan, Sheng Chu, and Jianlin Liu
Appl. Phys. A 111, 719(2013) view pdf
J149. “Rapid
thermal oxygen annealing formation of nickel silicide nanocrystals for
nonvolatile memory”
H. M. Zhou, Z. L. Li, J. –G. Zheng,
and J. L. Liu
Appl. Phys. A 109, 535(2012) view pdf
J147. “Nonplanar NiSi Nanocrystal
Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for
Extending Nanocrystal Memory Scaling Limit”
Jingjian
Ren, Bei Li, Jian-Guo
Zheng, Mario Olmedo, Huimei
Zhou, Yi Shi, and Jianlin Liu
IEEE Electron Device Letters 33,
1390(2012) view pdf
J146.
“Strain-less directed self-assembly of Si nanocrystals on patterned SiO2
substrate”
Jingjian
Ren, Hao Hu, Feng Liu, Sheng Chu, and Jianlin Liu
J. Appl. Phys. 112, 054311 (2012) view pdf
J141.
“Temperature-Dependent Electron Transport in Highly Ordered Co/Al2O3
Core-Shell Nanocrystal
Memory Synthesized with Di-Block
Co-Polymers”
Huimei
Zhou, James A. Dorman, Ya-Chuan Perng,
Jane P. Chang, and Jianlin Liu
J. Appl. Phys. 111,
064505(2012) view pdf
J139. “High-density NiSi nanocrystals
embedded in Al2O3/SiO2 double-barrier for
robust retention of nonvolatile memory”
Jingjian Ren, Bei Li, Jian-Guo Zheng,
and Jianlin Liu
Solid-State Electronics 67, 23(2012) view pdf
J137. “Carbon nanotube memory by the self-assembly of silicon
nanocrystals as charge storage nodes”
Mario Olmedo, Chuan
Wang, Koungmin Ryu, Huimei Zhou, Jingjian Ren, Ning Zhan, Chongwu Zhou, and
Jianlin Liu
ACS Nano 5, 7972(2011) view pdf
J134.
“Vapor-solid-solid growth of NiSi2 nanocrystals for memory
applications”
Bei Li, Jianlin Liu, Reuben D. Gann,
Jory A. Yarmoff, and Yu Zhu
IEEE Transactions on Nanotechnology
10, 1120(2011) view
pdf
J128. “TiSi2 nanocrystal metal oxide
semiconductor field effect transistor memory”
Huimei Zhou, Bei Li,
Zheng Yang, Ning Zhan, Dong Yan, Roger K. Lake, and Jianlin Liu
IEEE Transactions on Nanotechnology
10, 499(2011) view
pdf
J127.
“Memory characteristics of ordered Co/Al2O3 core-shell
nanocrystal arrays assembled by di-block co-polymer process”
Huimei Zhou, James A. Dorman, Ya-Chuan Perng, Stephanie Gachot, Jian-Guo Zheng, Jane P. Chang, and Jianlin Liu
Appl. Phys. Lett. 98, 192107(2011) view pdf
J125.
“Nonvolatile memories with Ge/Si heteronanocrystals
as floating gate”
Bei Li, and Jianlin Liu
IEEE Transactions on Nanotechnology
10, 284(2011) view
pdf
J118. “Synthesis
of high-density PtSi nanocrystals for memory
applications”
Bei Li, Jingjian
Ren and Jianlin Liu
Appl. Phys. Lett.
96, 172104(2010)
Mario
Olmedo, Alfredo A. Martinez-Morales, Gang Liu, Emre Yengel, Cengiz S. Ozkan, Chun
Ning Lau,
Mihrimah Ozkan, and Jianlin Liu
ICSI-6, May 17-22, 2009, Los Angeles
Thin Solid Films 518, S35(2010)
C56. “Self-assembled Ge/Si hetero-nanocrystals for
nonvolatile memory application”
Bei Li, and Jianlin Liu
ICSI-6, May 17-22, 2009, Los Angeles
Thin Solid Films 518, S262(2010)
C55. “Performance enhancement of TiSi2
coated Si nanocrystal memory device”
Huimei Zhou,
MRS
Spring 2009, San Francisco, USA, Mater. Res. Soc. Symp. Proc. Vol. 1160,
1160-H01-05, 2009
C54. “VSS-induced
NiSi2 nanocrystal memory”
Bei Li, and
MRS Spring 2009, San
Francisco, USA, Mater. Res. Soc. Symp. Proc. Vol. 1160, 1160-H01-09, 2009
J112. “CoSi2-coated
Si nanocrystal memories”
Bei Li, and Jianlin Liu
J. Appl. Phys. 105, 084905(2009)
J111. “Periodic alignment of Si quantum
dots on hafnium oxide coated single wall carbon nanotubes”
Mario Olmedo, Alfredo A.
Martinez-Morales, Gang Liu, Emre Yengel,
Cengiz S. Ozkan,
Chun Ning Lau, Mihrimah Ozkan, and
Jianlin Liu
Appl. Phys. Lett. 94, 123109(2009)
C53.
“High-performance hetero-nanocrystal memories”
Bei Li, Yan Zhu, Huimei Zhou, and
2008 9th
International Conference on Solid-state and Integrated Circuits Technology, Oct
20-Oct 23, 2008, Beijing, (Invited)
J104. “A TiSi2/Si
hetero-nanocrystal memory operated with hot carrier injections”
Y. Zhu, and J. L. Liu
IEEE Transactions on Nanotechnology
7, 305(2008)
C51. “Self-aligned TiSi2/Si
Hetero-nanocrystal Nonvolatile Memory”
Yan Zhu, Bei Li and Jianlin
Liu
MRS Spring 2007, San
Francisco, USA, Mater. Res. Soc. Symp. Proc. Vol. 997, 0997-I02-05, 2007
J97. “Ge/Si heteronanocrystal floating gate memory”
Bei Li, Jianlin Liu, G. F.
Liu, and J. A. Yormoff
Appl. Phys. Lett. 91, 132107(2007)
J91. “Fabrication and
characterization of TiSi2/Si heteronanocrystal
metal-oxide-semiconductor memories”
Y. Zhu, B. Li, and J. L. Liu
J. Appl. Phys. 101, 063702(2007)
Yan Zhu, Dengtao Zhao, and Jianlin Liu
Journal of Applied Physics 101,
034508(2007)
J88. “TiSi2/Si heteronanocrystal
metal-oxide-semiconductor-field-effect-transistor memory”
Yan Zhu, Bei Li,
Jianlin Liu, G. F. Liu and J. A. Yarmoff
Applied Physics
Letters 89, 233113(2006)
J83. “Emerging memory
devices: Nontraditional possibilities based on nanomaterials and
nanostructures”
K. Galatsis, Y.Y. Botros, K. Wang, Y. Yang, Y. H. Xie, F. Stoddart, R.
Kaner, C. Ozkan, J. L. Liu,
M.Ozkan, C. Zhou, and K. W. Kim
IEEE Circuits & Devices Magazine, 22, 12(2006)
J80. “Transient process in
a Ge/Si hetero-nanocrystal p-channel memory”
Dengtao Zhao, Yan Zhu, Ruigang Li, and
Jianlin Liu
Solid-state Electronics 50, 362(2006)
J77. “Self-aligned TiSi2/Si heteronanocrystal
nonvolatile memory”
Yan Zhu, Dengtao Zhao, Ruigang Li, and
Jianlin Liu
Appl. Phys. Lett. 88, 103507(2006)
J75. “Charge storage in a
metal-oxide-semiconductor capacitor containing cobalt nanocrystals”
Dengtao Zhao, Yan Zhu, and Jianlin Liu
Solid-State Electronics 50, 268(2006)
J72. “Simulation of a Ge-Si
Hetero-Nanocrystal Memory”
D. T. Zhao, Y. Zhu, R. G. Li, and J. L.
Liu
IEEE Trans. on Nanotechnology, 5, 37(2006)
J69. “Simulation of a
cobalt silicide/Si hetero-nanocrystal memory”
Dengtao Zhao, Yan Zhu, Ruigang Li, and
Jianlin Liu
Solid-State Electronics 49, 1974(2005)
J65. “Threshold voltage
shift of heteronanocrystal floating gate flash
memory”
Yan Zhu, Dengtao Zhao, Ruigang Li, and
Jianlin Liu
J. Appl. Phys. 97, 034309(2005)
C46. “Threshold
Voltage Shift in Hetero-Nanocrystal Floating Gate Flash Memories”
Yan Zhu, Dengtao Zhao, Ruigang Li, and
Jianlin Liu
MRS Fall 2004, Boston, USA, November 29-December 3, 2004
Dengtao Zhao, Yan Zhu, Ruigang Li, and
Jianlin Liu
MRS Fall 2004, Boston, USA, November 29-December 3, 2004